Enhanced Second-Harmonic Generation Using Broken Symmetry III-V Semiconductor Fano Metasurfaces

被引：238

作者：

Vabishchevich, Polina P. ^{[1
,2
]}

Liu, Sheng ^{[1
,2
]}

Sinclair, Michael B. ^{[1
]}

Keeler, Gordon A. ^{[1
]}

Peake, Gregory M. ^{[1
]}

Brener, Igal ^{[1
,2
]}

机构：

[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

[2] Sandia Natl Labs, Ctr Integrated Nanotechnol, POB 5800, Albuquerque, NM 87185 USA

来源：

ACS PHOTONICS | 2018年 / 5卷 / 05期

关键词：

second-harmonic generation; dielectric metasurfaces; Fano resonances; III-V semiconductors; DIELECTRIC METASURFACES; 3RD-HARMONIC GENERATION; NANOPARTICLES DRIVEN; RESONANCES; NANOANTENNAS; METAMATERIALS; OLIGOMERS;

D O I：

10.1021/acsphotonics.7b01478

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

All-dielectric metasurfaces, two-dimensional arrays of subwavelength low loss dielectric inclusions, can be used not only to control the amplitude and phase of optical beams, but also to generate new wavelengths through enhanced nonlinear optical processes that are free from some of the constraints dictated by the use of bulk materials. Recently, high quality factor (Q) resonances in these metasurfaces have been revealed and utilized for applications such as sensing and lasing. The origin of these resonances stems from the interference of two nanoresonator modes with vastly different Q Here we show that nonlinear optical processes can be further enhanced by utilizing these high-Q resonances in broken symmetry all-dielectric metasurfaces. We study second harmonic generation from broken symmetry metasurfaces made from III-V semiconductors and observe nontrivial spectral shaping of second-harmonic and multifold efficiency enhancement induced by high field localization and enhancement inside the nanoresonators.

引用

页码：1685 / 1690

页数：11

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