Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields

被引：6

作者：

Veinger, A. I. ^{[1
]}

Tisnek, T. V. ^{[1
]}

Kochman, I. V. ^{[1
]}

Okulov, V. I. ^{[2
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Mikheev Inst Met Phys, Ural Branch, Ekaterinburg 620137, Russia

来源：

SEMICONDUCTORS | 2017年 / 51卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

P-GE; MAGNETORESISTANCE; FEATURES; SEMICONDUCTORS; TRANSITION;

D O I：

10.1134/S1063782617020233

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.

引用

页码：163 / 167

页数：5

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