A 2.14 GHz, 0.78 dB noise figure CMOS low noise amplifier

被引:0
|
作者
Pienkowski, Dariusz [1 ]
Circa, Radu [1 ]
Boeck, George [1 ]
机构
[1] Tech Univ Berlin, Microwave Engn Grp, Sekr HFT 5 1, D-10587 Berlin, Germany
来源
2005 EUROPEAN CONFERENCE ON WIRELESS TECHNOLOGIES (ECWT), CONFERENCE PROCEEDINGS | 2005年
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a 2 GHz LNA designed for UNITS mobile terminals. The circuit is implemented in a 0.13 mu m CMOS technology. In design methodology small signal and noise parameters of the amplifier are combined, and pad capacitance is used for improving the noise performance. The designed amplifier shows 0.78 dB noise figure and 12 dB gain at 2.14 GHz for 3.5 mA supply current and 1.2 V supply voltage.
引用
收藏
页码:27 / 30
页数:4
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