Molecular beam epitaxy of Si/Ge nanoislands on stripe-patterned Si (001) substrates with different stripe orientations

被引：5

作者：

Matei, D. ^{[1
,2
]}

Sanduijav, B. ^{[1
]}

Chen, G. ^{[1
]}

Hesser, G. ^{[1
]}

Springholz, G. ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

[2] Natl Inst Laser Plasma & Radiat Phys, RO-077125 Bucharest, Romania

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Nanostructures; Scanning tunneling microscopy; Molecular beam epitaxy; Semiconducting silicon; ISLANDS; SI(001);

D O I：

10.1016/j.jcrysgro.2008.12.004

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Molecular beam epitaxy of Si and Ge on the stripe-patterned Si (0 0 1) substrates is studied by scanning tunneling microscopy. The stripe patterns consist of one-dimensional etch grooves oriented along different azimuth directions within the Si (0 0 1) surface. During Si buffer growth, the stripe morphology rapidly changes and the side walls of the grooves are transformed into differently inclined low-energy Si facets, depending on the stripe orientation and growth conditions. Subsequent Ge growth drastically changes the surface topography to form energetically favorable {1 0 5} sidewall facets. Depending on the sidewall geometry, Ge nanoislands formed at a coverage of around 5 monolayers nucleate either in the middle of the sidewalls or in the center of the grooves as a result of material accumulation induced by capillary forces and strain relaxation. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：2220 / 2223

页数：4

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