Circular dichroism in InAs/GaAs quantum dots:: Confinement-induced magnetism

被引:2
|
作者
Bogaart, E. W. [1 ]
Haverkort, J. E. M. [1 ]
Mano, T. [1 ]
van Lippen, T. [1 ]
Hamhuis, G. J. [1 ]
Noetzel, R. [1 ]
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
关键词
D O I
10.1103/PhysRevB.74.153307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Self-assembled InAs/GaAs quantum dots (QDs) are studied by means of circular polarization-resolved photoluminescence and pump-probe differential reflectivity as a function of the excitation density using a linear polarized pump laser. We observe an unexpected large circular polarization anisotropy, which decreases with increasing excitation density for both experimental techniques. Comparison of the respective polarization degrees reveals a ratio of approximately 0.2. Moreover, the reflection measurements reveal circular dichroism with a ratio of Theta(+)/Theta(-)=1.16. Circular dichroism in semiconductor QDs can be explained by the induced magnetism as a result of light confinement in QDs, providing an anisotropic coupling between the pump-induced QD exciton and the circularly polarized probe field.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Photoluminescence and magnetophotoluminescence of circular and elliptical InAs/GaAs quantum dots
    Kuldová, K.
    Krápek, V.
    Hospodková, A.
    Zrzavecká, O. Bonaventurová
    Oswald, J.
    Hulicius, E.
    Humlicek, J.
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 983 - 986
  • [2] Regrowth dynamics of InAs quantum dots on the GaAs circular mesa
    Xie, ZG
    Fang, W
    Cao, H
    Solomon, GS
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 342 - 345
  • [3] Deep levels induced by InAs/GaAs quantum dots
    Kaniewska, M.
    Engström, O.
    Barcz, A.
    Pacholak-Cybulska, M.
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 871 - 875
  • [4] Transient linear dichroism in InAs/GaAs self-assembled quantum dots
    Tribollet, J
    Maingault, L
    Lemaître, A
    Sermage, B
    Gérard, JM
    Bernardot, F
    Testelin, C
    Chamarro, M
    8TH CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS-8), 2004, : 585 - 588
  • [5] Photochemically Induced Circular Dichroism of Semiconductor Quantum Dots
    Safin, Farrukh
    Kolesoya, Ekaterina
    Maslov, Vladimir
    Gun'ko, Yurii
    Baranov, Alexander
    Fedorov, Anatoly
    JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (32): : 19979 - 19983
  • [6] Rough InAs/GaAs quantum dots
    Bezerra, M. G.
    Farlas, G. A.
    Freire, J. A. K.
    Ferreira, R.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 899 - +
  • [7] Dephasing in InAs/GaAs quantum dots
    Borri, P
    Langbein, W
    Mork, J
    Hvam, JM
    Heinrichsdorff, F
    Mao, MH
    Bimberg, D
    PHYSICAL REVIEW B, 1999, 60 (11): : 7784 - 7787
  • [8] Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots
    Kuldova, K.
    Molas, M.
    Borysiuk, J.
    Babinski, A.
    Vyborny, Z.
    Pangrac, J.
    Oswald, J.
    QUANTUM DOTS 2010, 2010, 245
  • [9] Anharmonicity-induced polaron relaxation in GaAs/InAs quantum dots
    Jacak, L
    Krasnyj, J
    Jacak, D
    Machnikowski, P
    PHYSICAL REVIEW B, 2002, 65 (11): : 1 - 4
  • [10] Cap layer induced stress in InAs/(Al)GaAs quantum dots
    Chen, SD
    Chen, YY
    Lee, SC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (05): : 2132 - 2136