Guided-wave photodetectors in germanium on SOI optical chips

被引：7

作者：

Sorianello, V. ^{[1
,2
]}

Balbi, M. ^{[1
,2
]}

Colace, L. ^{[1
,2
]}

Assanto, G. ^{[1
,2
]}

Socci, L. ^{[3
]}

Bolla, L. ^{[3
]}

Mutinati, G. ^{[3
]}

Romagnoli, M. ^{[3
]}

机构：

[1] Univ Roma Tre, CNISM, Ist Nazl Fis Nucl, NooEL Nonlinear Opt & OptoElect Lab, I-00146 Rome, Italy

[2] Univ Roma Tre, Dept Elect Engn, I-00146 Rome, Italy

[3] Pirelli Labs, Milan, Italy

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 06期

关键词：

Germanium detectors; Near-infrared; Optoelectronic devices; Photodiodes; Silicon optoelectronics; Waveguide photodetectors; GE PHOTODETECTORS; SILICON;

D O I：

10.1016/j.physe.2008.08.038

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on near-infrared waveguide photodetectors realized in germanium evaporated at low temperature on silicon-on-insulator optical chips. We discuss the fabrication and integration and show experimental results in terms of dark current, responsivity and signal to noise ratio. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1090 / 1093

页数：4

共 7 条

[1] High performance, waveguide integrated Ge photodetectors [J].