Electrical properties of a Ba1-xKxBiO3Nb-doped SrTiO3 Schottky junction

被引：1
作者：
Suzuki, S
Yamamoto, T
Suzuki, H
Kawaguchi, K
Takahashi, K
Yoshisato, Y
机构：
[1] Tsukuba Research Center, SANYO Electric Co., Ltd., Tsukuba, Ibaraki 305
来源：
PHYSICA C | 1997年 / 282卷
关键词：
D O I：
10.1016/S0921-4534(97)01353-1
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Current-voltage properties for a Ba1-xKxBiO3/Nb-doped SrTiO3 (0.01 wt%) Schottky junction have been measured and investigated over a temperature range from 5.3 to 300 K. Excellent rectification properties of the junction were observed, with high reproducibility. The barrier height V omega decreased and the ideality factor n increased with decreasing temperature. The modified Richardson plot of saturation current density showed a straight-line dependence. These results may be explained by the existence of interfacial layer or the inhomogeneity of the Schottky barrier height.
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页码：2501 / 2502
页数：2
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