Heterojunctions and superlattices based on silicon carbide

被引：144
作者：
Lebedev, A. A. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 06期
关键词：
D O I：
10.1088/0268-1242/21/6/R01
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in different modifications (polytypes). Having the same chemical nature, SiC polytypes may significantly differ in their electrical parameters. In recent years, the world's interest in the fabrication and study of heteropolytype structures based on silicon carbide has considerably increased. This review considers studies concerned with polytypism in SiC, fabrication technologies of various types of heterostructures constituted by different SiC polytypes and their electrical parameters. It is shown that heterostructures between SiC polytypes may have a better structural perfection than those constituted by semiconductors that differ in chemical nature. A conclusion is made that SiC-based heterostructures are promising for application in modern electronic devices.
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收藏
页码：R17 / R34
页数：18
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