Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor

被引：36

作者：

Marechal, A. ^{[1
,2
,3
]}

Aoukar, M. ^{[1
,4
]}

Vallee, C. ^{[1
,4
]}

Riviere, C. ^{[1
,2
]}

Eon, D. ^{[1
,2
]}

Pernot, J. ^{[1
,2
,5
]}

Gheeraert, E. ^{[1
,2
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CNRS, Inst NEEL, F-38000 Grenoble, France

[3] CNRS, G2Elab, F-38000 Grenoble, France

[4] CNRS, LTM, F-38000 Grenoble, France

[5] Inst Univ France, F-75005 Paris, France

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 14期

关键词：

BORON; TRANSISTOR; SPECTRA;

D O I：

10.1063/1.4931123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond metal-oxide-semiconductor capacitors were prepared using atomic layer deposition at 250 degrees C of Al2O3 on oxygen-terminated boron doped (001) diamond. 'Their electrical properties were investigated in terms of capacitance and current versus voltage measurements. Performing X-ray photoelectron spectroscopy based on the measured core level energies and valence band maxima, the interfacial energy band diagram configuration of the Al2O3/O-diamond is established. The band diagram alignment is concluded to be of type I with valence band offset Delta E-v of 1.34 +/- 0.2 eV and conduction band offset Delta E-c of 0.56 +/- 0.2 eV considering an Al2O3 energy band gap of 7,4 eV. The agreement with electrical measurement and the ability to perform a MOS transistor are discussed. (C) 2015 AIP Publishing LLC.

引用

页数：5

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