Impurity dominated thin film growth

被引:25
作者
Cougnon, F. G. [1 ]
Dulmaa, A. [1 ]
Dedoncker, R. [1 ]
Galbadrakh, R. [2 ]
Depla, D. [1 ]
机构
[1] Univ Ghent, Dept Solid State Sci, Krijgslaan 281 S1, B-9000 Ghent, Belgium
[2] Natl Univ Mongolia, Dept Phys, Ulaanbaatar 14201, Mongolia
关键词
GRAIN-GROWTH; MECHANICAL-PROPERTIES; DEPOSITION PARAMETERS; STRESS; OXYGEN; MICROSTRUCTURE; NUCLEATION; TEXTURE; AL; COEFFICIENT;
D O I
10.1063/1.5021528
中图分类号
O59 [应用物理学];
学科分类号
摘要
Magnetron sputter deposition was applied to grow thin metal films in the presence of impurities. These impurities are ambient gas molecules and/or atoms from the residual gas present in the vacuum chamber. Seven materials were investigated: four single element metals (Al, Ag, Cu, and Cr), two widely applied alloys (Cu55Ni45 and Ni90Cr10), and one high entropy alloy (CoCrCuFeNi). The thin films were analyzed using X-ray diffraction to determine the domain size, the film texture, and the lattice parameter. The same trend for all studied materials is observed. When the ratio between the impurity and metal flux towards the substrate is low, the domain size is not affected by the presence of the impurities. In this regime, the incorporation of the impurities affects the lattice parameter. At high flux ratios, the change of the domain size can be described by a power law with the exponent equal to -1/2 for all studied materials. A kinetic Monte Carlo code is used to demonstrate this observed trend. Published by AIP Publishing.
引用
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页数:5
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