Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric

被引：33

作者：

Li, Chen-Chien ^{[1
]}

Chang-Liao, Kuei-Shu ^{[1
]}

Chi, Wei-Fong ^{[1
]}

Li, Mong-Chi ^{[1
]}

Chen, Ting-Chun ^{[1
]}

Su, Tzu-Hsiang ^{[1
]}

Chang, Yu-Wei ^{[1
]}

Tsai, Chia-Chi ^{[1
]}

Liu, Li-Jung ^{[1
]}

Fu, Chung-Hao ^{[1
]}

Lu, Chun-Chang ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 01期

关键词：

Ge MOSFET; HfO2; ZrO2; LAYER; ZRO2;

D O I：

10.1109/LED.2015.2497348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical characteristics of Ge pMOSFETs with HfO2, ZrO2, ZrO2/HfO2, and HfZrOx gate dielectrics are studied in this letter. A lower equivalent oxide thickness (EOT) is obtained in ZrO2 device, which, however, has a higher interface trap density (D-it) due to its inferior dielectric/Ge interface. Interestingly, the D-it and sub-threshold swing of Ge pMOSFETs are clearly reduced by ZrO2/HfO2 stack gate dielectric. A peak hole mobility of 335 cm(2)/V-s is achieved in ZrO2/HfO2 device thanks to good dielectric/Ge interface. Furthermore, the EOT of ZrO2/HfO2 device is 0.62 nm, and the leakage current is 2 x 10(-3) A/cm(2). Therefore, a ZrO2/HfO2 stack gate dielectric is promising for Ge MOSFETs.

引用

页码：12 / 15

页数：4

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