Single-electron transistors

被引:0
作者
Hadley, P
Lientschnig, G
Lai, MJ
机构
[1] Delft Univ Technol, Dept Nanosci, NL-2628 CJ Delft, Netherlands
[2] ITRI, ERSO, Hsinchu 310, Taiwan
来源
COMPOUND SEMICONDUCTORS 2002 | 2003年 / 174卷
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-electron transistors (SET's) are often discussed as elements of nanometer scale electronic circuits because they can be made very small and they can detect the motion of individual electrons. However, SET's have low voltage gain, high output impedances, and are sensitive to random background charges. This makes it unlikely that single-electron transistors would ever replace field-effect transistors (FET's) in applications where large voltage gain or low output impedance is necessary. The most promising applications for SET's are charge-sensing applications such as the readout of few electron memories, the readout of charge-coupled devices, and precision charge measurements in metrology.
引用
收藏
页码:125 / 132
页数:8
相关论文
共 14 条
  • [1] Wide-range thermometer based on the temperature-dependent conductance of planar tunnel junctions
    Gloos, K
    Poikolainen, RS
    Pekola, JP
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (18) : 2915 - 2917
  • [2] Superconducting single-electron push-pull amplifier stage
    Heij, CP
    Hadley, P
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2002, 73 (02) : 491 - 492
  • [3] Few-electron quantum dots
    Kouwenhoven, LP
    Austing, DG
    Tarucha, S
    [J]. REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (06) : 701 - 736
  • [4] Kondo resonance in a single-molecule transistor
    Liang, WJ
    Shores, MP
    Bockrath, M
    Long, JR
    Park, H
    [J]. NATURE, 2002, 417 (6890) : 725 - 729
  • [5] LIENTSCHNIG G, UNPUB JAP J APPL PHY
  • [6] Single-electron devices and their applications
    Likharev, KK
    [J]. PROCEEDINGS OF THE IEEE, 1999, 87 (04) : 606 - 632
  • [7] Si complementary single-electron inverter with voltage gain
    Ono, Y
    Takahashi, Y
    Yamazaki, K
    Nagase, M
    Namatsu, H
    Kurihara, K
    Murase, K
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (21) : 3121 - 3123
  • [8] Nanomechanical oscillations in a single-C60 transistor
    Park, H
    Park, J
    Lim, AKL
    Anderson, EH
    Alivisatos, AP
    McEuen, PL
    [J]. NATURE, 2000, 407 (6800) : 57 - 60
  • [9] Coulomb blockade and the Kondo effect in single-atom transistors
    Park, J
    Pasupathy, AN
    Goldsmith, JI
    Chang, C
    Yaish, Y
    Petta, JR
    Rinkoski, M
    Sethna, JP
    Abruña, HD
    McEuen, PL
    Ralph, DC
    [J]. NATURE, 2002, 417 (6890) : 722 - 725
  • [10] Room-temperature Al single-electron transistor made by electron-beam lithography
    Pashkin, YA
    Nakamura, Y
    Tsai, JS
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (16) : 2256 - 2258