Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

被引:18
作者
Jeong, Hwan-Seok [1 ]
Cha, Hyun Seok [1 ]
Hwang, Seong Hyun [1 ]
Kwon, Hyuck-In [1 ]
机构
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06972, South Korea
基金
新加坡国家研究基金会;
关键词
indium-gallium-tin oxide; thin-film transistor; annealing atmosphere; field-effect mobility; electrical stability; IMPROVEMENT;
D O I
10.3390/electronics9111875
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
In this study, we examined the effects of the annealing atmosphere on the electrical performance and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs). The annealing process was performed at a temperature of 180 degrees C under N-2, O-2, or air atmosphere after the deposition of IGTO thin films by direct current magnetron sputtering. The field-effect mobility (mu(FE)) of the N-2- and O-2-annealed IGTO TFTs was 26.6 cm(2)/V.s and 25.0 cm(2)/V.s, respectively; these values were higher than that of the air-annealed IGTO TFT (mu(FE) = 23.5 cm(2)/V.s). Furthermore, the stability of the N-2- and O-2-annealed IGTO TFTs under the application of a positive bias stress (PBS) was greater than that of the air-annealed device. However, the N-2-annealed IGTO TFT exhibited a larger threshold voltage shift under negative bias illumination stress (NBIS) compared with the O-2- and air-annealed IGTO TFTs. The obtained results indicate that O-2 gas is the most suitable environment for the heat treatment of IGTO TFTs to maximize their electrical properties and stability. The low electrical stability of the air-annealed IGTO TFT under PBS and the N-2-annealed IGTO TFT under NBIS are primarily attributed to the high density of hydroxyl groups and oxygen vacancies in the channel layers, respectively.
引用
收藏
页码:1 / 10
页数:10
相关论文
共 39 条
[1]  
[Anonymous], 2019, ELECTRONICS SWITZ, DOI DOI 10.3390/electronics8090955
[2]   Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors [J].
Choi, Sungju ;
Kim, Jae-Young ;
Kang, Hara ;
Ko, Daehyun ;
Rhee, Jihyun ;
Choi, Sung-Jin ;
Kim, Dong Myong ;
Kim, Dae Hwan .
MATERIALS, 2019, 12 (19) :3149
[3]   Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250°C [J].
Chowdhury, Md Delwar Hossain ;
Um, Jae Gwang ;
Jang, Jin .
APPLIED PHYSICS LETTERS, 2014, 105 (23)
[4]   Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin Film Transistors [J].
Chung, Wan-Fang ;
Chang, Ting-Chang ;
Li, Hung-Wei ;
Tseng, Tseung-Yuen ;
Tai, Ya-Hsiang .
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53), 2011, 41 (06) :265-271
[5]   Role of environmental and annealing conditions on the passivation-free in-Ga-Zn-O TFT [J].
Fuh, Chur-Shyang ;
Sze, Simon Min ;
Liu, Po-Tsun ;
Teng, Li-Feng ;
Chou, Yi-Teh .
THIN SOLID FILMS, 2011, 520 (05) :1489-1494
[6]   Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes [J].
Hu, Shiben ;
Ning, Honglong ;
Lu, Kuankuan ;
Fang, Zhigiang ;
Li, Yuzhi ;
Yao, Rihui ;
Xu, Miao ;
Wang, Lei ;
Peng, Junbiao ;
Lu, Xubing .
NANOMATERIALS, 2018, 8 (04)
[7]   Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor [J].
Huang, X. D. ;
Ma, Y. ;
Song, J. Q. ;
Lai, P. T. ;
Tang, W. M. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (03) :1009-1013
[8]   Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs [J].
Huang, Xiaoming ;
Zhou, Dong ;
Xu, Weizong .
APPLIED SCIENCES-BASEL, 2019, 9 (09)
[9]   Enhancement of In-Sn-Ga-O TFT performance by the synergistic combination of UV + O3 radiation and low temperature annealing [J].
Jeong, Hyun-Jun ;
Lee, Hyun-Mo ;
Oh, Keun-Tae ;
Park, Jozeph ;
Park, Jin-Seong .
JOURNAL OF ELECTROCERAMICS, 2016, 37 (1-4) :158-162
[10]   Stability Improvement of In-Sn-Ga-O Thin-Film Transistors at Low Annealing Temperatures [J].
Jeong, Hyun-Jun ;
Ok, Kyung-Chul ;
Park, Jozeph ;
Lim, Junhyung ;
Cho, Johann ;
Park, Jin-Seong .
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (11) :1160-1162