Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage

被引：18

作者：

Adak, Sarosij ^{[1
]}

Swain, Sanjit Kumar ^{[1
]}

Singh, Avtar ^{[2
]}

Pardeshi, Hemant ^{[1
]}

Pati, Sudhansu Kumar ^{[3
]}

Sarkar, Chandan Kumar ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata, India

[2] Invertis Univ, Dept Elect & Commun, Barielly, India

[3] Silicon Inst Technol, Dept Elect & Telecommun Engn, Bhubaneswar, Orissa, India

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2014年 / 64卷

关键词：

Source field plate; MOS-HEMT; AlGaN/GaN; Current collapse; Passivation; Breakdown voltage; SURFACE-STATES; OXIDE; MOBILITY; TRANSISTORS; GAN;

D O I：

10.1016/j.physe.2014.07.021

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the present paper, we propose a novel device structure by introducing a source field-plated AlGaN/GaN in the metal oxide Semiconductor high electron mobility transistors (MOS-HEMT) structure having a relatively short gate length and short gate-to-drain distances. The 2D breakdown analysis is performed using Sentaurus TCAD simulator. The effects of gate to drain distance (L-gd), source field plate length (L-fp) and passivation layer thickness (t(p)) on breakdown voltage (BV) is analyzed. The simulations are done using the drift-diffusion (DD) model, which is calibrated/validated with the previously published experimental results. The breakdown voltage is observed to increase with increase in L-fp and t(p). Very high breakdown voltage of 752.8 V is obtained by optimizing the L-fp to 3 mu M and t(p) to 200 nm at a fixed gate to drain distance of 3.4 mu m. The results show a great potential application of the ultra-thin HfAlO source field plated AlGaN/GaN MOS-HEMT to deliver high currents and power densities in high power microwave technologies. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：152 / 157

页数：6

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