Preparation and characterization of ZnIn2S4 thin film

被引：8
作者：
Sampath, Hemalatha [1 ]
Jayaraj, Tamil Illakkiya [1 ]
Oommen, Rachel [1 ]
Parthasarathy, Usha Rajalakshmi [1 ]
机构：
[1] Avinashilingam Inst Home Sci & Higher Educ Women, Dept Phys, Coimbatore, Tamil Nadu, India
来源：
EMERGING MATERIALS RESEARCH | 2015年 / 4卷 / 02期
关键词：
energy gap; scanning electron microscopy; thin films; ASSISTED HYDROTHERMAL SYNTHESIS; PHOTOCATALYTIC PERFORMANCE; MICROSPHERES; FABRICATION;
D O I：
10.1680/jemmr.15.00023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnIn2S4 (ZIS) crystalline thin film was prepared by novel spray pyrolysis technique. The as-deposited ZIS film was characterized by X-ray diffraction technique, ultraviolet-visible-near infrared spectroscopy, field emission scanning electron microscopy and energy dispersive analysis by X-rays. X-ray diffraction pattern revealed the crystalline nature of the material. Absorption edge was found to be 471 nm. Direct band gap of the film was calculated and found to be 2.68 eV. The absorption coefficient of the ZIS film exhibits the maximum value of 5.3 x 10(6) cm(-1). The as-deposited ZIS composition was nearly stoichiometric.
引用
收藏
页码：286 / 289
页数：4
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