Characterization of Annealing in Polycrystalline Copper Using Harmonic Generation Technique
被引:6
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作者:
Mini, R. S.
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Indian Inst Technol, Dept Mech Engn, CNDE, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Mech Engn, CNDE, Madras 600036, Tamil Nadu, India
Mini, R. S.
[1
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Balasubramaniam, Krishnan
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Indian Inst Technol, Dept Mech Engn, CNDE, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Mech Engn, CNDE, Madras 600036, Tamil Nadu, India
Balasubramaniam, Krishnan
[1
]
Ravindran, Parag
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Indian Inst Technol, Dept Engn Mech, Madras, Tamil Nadu, IndiaIndian Inst Technol, Dept Mech Engn, CNDE, Madras 600036, Tamil Nadu, India
Ravindran, Parag
[2
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机构:
[1] Indian Inst Technol, Dept Mech Engn, CNDE, Madras 600036, Tamil Nadu, India
[2] Indian Inst Technol, Dept Engn Mech, Madras, Tamil Nadu, India
来源:
40TH ANNUAL REVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION: INCORPORATING THE 10TH INTERNATIONAL CONFERENCE ON BARKHAUSEN NOISE AND MICROMAGNETIC TESTING, VOLS 33A & 33B
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2014年
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1581卷
Sensitivity of nonlinear ultrasonic method towards isothermal annealing in pure copper is investigated in this study. It was reported that, recovery, recrystallization and grain growth associated with annealing has profound influence on nonlinearity parameter. Presence of precipitates and secondary phase particles, and its effect on nonlinearity parameter was considered by many authors. However, in this study, focus is on the influence of grain-growth on nonlinearity parameter. Variation of non-linearity parameter, beta, with different holding durations were analyzed. All the samples were annealed at a temperature above its recrystallization temperature. Further, metallography studies as well as hardness measurements were performed to understand the relationship between microstructural changes and ultrasonic nonlinearity parameter.
机构:
Apple Inc, Los Altos, CA 95014 USAApple Inc, Los Altos, CA 95014 USA
Yang, Sen
Chen, Xiong
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机构:
Tianjin Univ, Sch Microelect, Tianjin 300072, Peoples R China
Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Peoples R ChinaApple Inc, Los Altos, CA 95014 USA
Chen, Xiong
Mi, Rui
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Graz Univ Technol, A-8010 Graz, AustriaApple Inc, Los Altos, CA 95014 USA
Mi, Rui
Lam, Cheung-Wei
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机构:
Apple Inc, Los Altos, CA 95014 USAApple Inc, Los Altos, CA 95014 USA
Lam, Cheung-Wei
Pommerenke, David
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机构:
Graz Univ Technol, A-8010 Graz, Austria
SAL GEMC Lab, A-8010 Graz, AustriaApple Inc, Los Altos, CA 95014 USA