Beta-Gallium Oxide Nanowire Extended Gate Field Effect Transistor pH Sensors Prepared Using Furnace-Oxidized Gallium Nitride Thin Films

被引：10
作者：
Chang, Sheng-Po [1 ,2 ]
Chen, Kuan-Jen [3 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[3] Natl Cheng Kung Univ, Instrument Ctr, Tainan 70101, Taiwan
来源：
NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2014年 / 6卷 / 10期
关键词：
Gallium Oxide Nanowires; Extended Gate Field Effect Transistor; pH Sensor; Gallium Nitride; GLASS;
D O I：
10.1166/nnl.2014.1848
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The structural characteristics of Ga2O3 nanowires and the sensitivity of Ga2O3 extended gate field effect transistor (EGFET) pH sensors are investigated. The Ga2O3 nanowires are prepared using a vapor-liquid-solid (VLS) mechanism. The results show that the nanowires correspond to beta-Ga2O3 phase and single crystals. The beta-Ga2O3 nanowires were active materials in the EGFET pH sensor. The resulting EGFET pH sensor containing beta-Ga2O3 nanowires exhibits high detection of properties (14 mu A . pH(-1)). The beta-Ga2O3 nanowires are a candidate material for pH sensor.
引用
收藏
页码：914 / 917
页数：4
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