Structural relaxation of amorphous silicon carbide

被引：126

作者：

Ishimaru, M ^{[1
]}

Bae, IT

Hirotsu, Y

Matsumura, S

Sickafus, KE

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Osaka Univ, Fac Engn, Dept Mat Sci & Engn, Suita, Osaka 5650871, Japan

[3] Kyushu Univ, Dept Appl Quantum Phys & Nucl Engn, Fukuoka 8128581, Japan

[4] Kyushu Univ, Dept Energy Sci & Engn, Fukuoka 8128581, Japan

[5] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1103/PhysRevLett.89.055502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have examined amorphous structures of silicon carbide (SiC) using both transmission electron microscopy and a molecular-dynamics approach. Radial distribution functions revealed that amorphous SiC contains not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds. The ratio of heteronuclear to homonuclear bonds was found to change upon annealing, suggesting that structural relaxation of the amorphous SiC occurred. Good agreement was obtained between the simulated and experimentally measured radial distribution functions.

引用

页数：4

共 50 条

[41] Innovative window layer for amorphous silicon/amorphous silicon carbide UV sensor
Caputo, D.
de Cesare, G.
Nascetti, A.
Tucci, M.
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1818 - 1821
[42] ACTIVATION-ENERGY SPECTRUM AND STRUCTURAL RELAXATION DYNAMICS OF AMORPHOUS-SILICON
SHIN, JH
ATWATER, HA
PHYSICAL REVIEW B, 1993, 48 (09) : 5964 - 5972
[43] Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films
Choi, WK
Loo, FL
Ling, CH
Loh, FC
Tan, KL
JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) : 7289 - 7294
[44] Evidence for structural changes of amorphous carbon coatings on silicon carbide during tribological tests
Berndt, F
Kleebe, HJ
Ziegler, G
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (11) : 3161 - 3166
[45] Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films
Choi, W.K.
Loo, F.L.
Ling, C.H.
Loh, F.C.
Tan, K.L.
Journal of Applied Physics, 1995, 78 (12):
[46] Structural and electronic properties of low dielectric constant carbon rich amorphous silicon carbide
Li, XM
Wong, TKS
Rusli
Yang, DJ
DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 963 - 967
[47] Structural analysis of buried amorphous layer in oxygen-ion-implanted silicon carbide
Ishimaru, M
Ohkubo, T
Hirotsu, Y
JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2001, 65 (05) : 361 - 365
[48] Synthesis and structural evolution of hydrogenated amorphous silicon carbide thin film with carbon nanostructures
Li, Mingming
Jiang, Lihua
Sun, Yihua
Xiao, Ting
Xiang, Peng
Tan, Xinyu
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2019, 503 : 252 - 259
[49] Structural Evolutions in Polymer-Derived Carbon-Rich Amorphous Silicon Carbide
Wang, Kewei
Ma, Baisheng
Li, Xuqin
Wang, Yiguang
An, Linan
JOURNAL OF PHYSICAL CHEMISTRY A, 2015, 119 (04): : 552 - 558
[50] Amorphous silicon carbide coatings grown by low frequency PACVD: Structural and mechanical description
Soum-Glaude, A.
ThomaS, L.
Tomasella, E.
SURFACE & COATINGS TECHNOLOGY, 2006, 200 (22-23): : 6425 - 6429

← 1 2 3 4 5 →