Structural relaxation of amorphous silicon carbide

被引：126

作者：

Ishimaru, M ^{[1
]}

Bae, IT

Hirotsu, Y

Matsumura, S

Sickafus, KE

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Osaka Univ, Fac Engn, Dept Mat Sci & Engn, Suita, Osaka 5650871, Japan

[3] Kyushu Univ, Dept Appl Quantum Phys & Nucl Engn, Fukuoka 8128581, Japan

[4] Kyushu Univ, Dept Energy Sci & Engn, Fukuoka 8128581, Japan

[5] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1103/PhysRevLett.89.055502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have examined amorphous structures of silicon carbide (SiC) using both transmission electron microscopy and a molecular-dynamics approach. Radial distribution functions revealed that amorphous SiC contains not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds. The ratio of heteronuclear to homonuclear bonds was found to change upon annealing, suggesting that structural relaxation of the amorphous SiC occurred. Good agreement was obtained between the simulated and experimentally measured radial distribution functions.

引用

页数：4

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