Effect of dry oxidation on the energy gap and chemical composition of CVD graphene on nickel

被引：25

作者：

Aria, Adrianus I. ^{[1
]}

Gani, Adi W. ^{[2
]}

Gharib, Morteza ^{[1
]}

机构：

[1] CALTECH, Grad Aeronaut Labs, Pasadena, CA 91125 USA

[2] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA

来源：

APPLIED SURFACE SCIENCE | 2014年 / 293卷

关键词：

CVD graphene; Energy gap; UV/ozone; Oxygen plasma; Vacuum anneal; STM/STS; XPS; X-RAY PHOTOELECTRON; RAMAN-SPECTROSCOPY; CARBON NANOTUBES; REVERSIBLE HYDROGENATION; EPITAXIAL GRAPHENE; LAYER GRAPHENE; BERRYS PHASE; OXIDE-FILMS; LARGE-AREA; OXYGEN;

D O I：

10.1016/j.apsusc.2013.11.117

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The findings presented herein show that the electronic properties of CVD graphene on nickel can be altered from metallic to semiconducting by introducing oxygen adsorbates via UV/ozone or oxygen plasma treatment. These properties can be partially recovered by removing the oxygen adsorbates via vacuum annealing treatment. The effect of oxidation is studied by scanning tunneling microscopy/spectroscopy (STM/STS) and X-ray photoelectron spectroscopy (XPS). As probed by STM/STS, an energy gap opening of 0.11-0.15 eV is obtainable as the oxygen/carbon atomic ratio reaches 13-16%. The corresponding XPS spectra show a significant monotonic increase in the concentration of oxygenated functional groups due to the oxidation treatments. This study demonstrates that the opening of energy gap in CVD graphene can be reasonably controlled by a combination of UV/ozone or oxygen plasma treatment and vacuum annealing treatment. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1 / 11

页数：11

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