Failure Mechanism for GaN-Based High-Voltage Light-Emitting Diodes

被引：10

作者：

Chang, Shoou-Jinn ^{[1
,2
]}

Chang, Chung-Ying ^{[1
,2
]}

Tseng, Chun-Lung ^{[3
]}

Shen, Ching-Shing ^{[3
]}

Chen, Bing-Yang ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Epistar Corp, Tainan 744, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2014年 / 26卷 / 11期

关键词：

GaN; high-voltage; light-emitting diodes; metal; Al; whisker; PATTERNED SAPPHIRE; NITRIDE; POWER; LEDS; ELECTROMIGRATION;

D O I：

10.1109/LPT.2014.2314701

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a detailed reliability test study on GaN-based high-voltage light-emitting diodes. Under high temperature (i.e., 80 degrees C) and high current injection (i.e., 100 mA) conditions, it was found that Al metal whiskers were formed from the sidewall of the Cr/Al/Ti/Pt/Au p-finger metal after 120-h burn-in test. It was also found that the whiskers became longer as we increased the burn-in time. Furthermore, it was found that the formation of Al whiskers is directly related to Al migration.

引用

页码：1073 / 1076

页数：4

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