Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs

被引：10
作者：
Anil, KG
Mahapatra, S
Eisele, I
机构：
[1] Univ Bundeswehr Munich, Inst Phys, Fac Elect Engn, Munich, Germany
[2] Agere Syst, Murray Hill, NJ 07974 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 07期
关键词：
electron-electron interactions; electron energy distribution; electron-phonon interactions; hot-carrier; impact ionization; Monte-Carlo simulation; MOSFET; silicon; thermal tail;
D O I：
10.1109/TED.2002.1013287
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Impact ionization at low drain voltages in n-MOSFETs was investigated employing devices with three different channel-doping profiles. We report an anomalous peak in substrate current (I-SUB) versus gate voltage (V-G) characteristics. It is shown that the anomalous peak can not be directly related to any high field region in the device. The measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups. Strong evidence is provided which suggest that the anomalous peak in I-SUB versus V-G is due to electron-electron interactions.
引用
收藏
页码：1283 / 1288
页数：6
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