Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE

被引：0

作者：

Chung, Gwiy-Sang ^{[1
]}

Ohn, Chang-Min ^{[1
]}

机构：

[1] Univ Ulsan, Sch Elect Engn, Ulsan, South Korea

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

Poly; 3C-SiC; Reactive ion etching; CHF3; M/NEMS;

D O I：

10.4028/www.scientific.net/MSF.600-603.875

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates by atmospheric pressure chemical vapor deposition (APCVD). The best vertical structures were obtained by the addition of 40 % O-2, 16 % Ar, and 44 % CHF3 reactive gas at 40 mTorr of chamber pressure. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. These results show that in a magnetron RIE system, it is possible to etch SiC with lower power than that of the commercial RIE system. Therefore, poly 3C-SiC etched by magnetron RIE has the potential to be applied to micro/nano electro mechanical systems (M/NEMS).

引用

页码：875 / 878

页数：4

共 6 条

[1]

Chung GS, 2005, J KOREAN PHYS SOC, V46, P1152

[2]

CHUNG GS, 2004, J KIMMEE, V17, P724

[3] Recent progress toward a manufacturable polycrystalline SiC surface micromachining technology [J].