High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga2O3 layer

被引：26

作者：

Meng, Ruilin ^{[1
,2
,3
]}

Ji, Xiaoli ^{[2
,3
]}

Lou, Zheng ^{[4
]}

Yang, Jiankun ^{[2
,3
]}

Zhang, Yonghui ^{[1
]}

Zhang, Zihui ^{[1
]}

Bi, Wengang ^{[1
]}

Wang, Junxi ^{[2
,3
]}

Wei, Tongbo ^{[2
,3
]}

机构：

[1] Hebei Univ Technol, Sch Elect & Informat Engn, Key Lab Elect Mat & Devices Tianjin, Tianjin 300401, Peoples R China

[2] Chinese Acad Sci, Semicond Lighting R&D Ctr, Inst Semicond, Beijing 100083, Peoples R China

[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

OPTICS LETTERS | 2019年 / 44卷 / 09期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

ENHANCED PHOTOCURRENT; POROUS GAN; PHOTOCONDUCTIVITY;

D O I：

10.1364/OL.44.002197

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the high-performance nanoporous (NP) GaN-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a thermal oxidized beta-Ga2O3 insulating layer. The devices show a high responsivity of 4.5 x 10(5) A/W and maximum external quantum efficiency of 1.55 x 10(8)% at 360 nm under a 10 V applied bias, which are attributed to the trap-assisted tunneling induced internal gain mechanism. Correspondingly, a specific detectivity of 8.27 x 10(15) Jones and excellent optical switching repeatability are also observed in our fabricated PDs. The NP-GaN/beta-Ga2O3 MIS UV PD may act as an excellent candidate for the application in UV photodetection due to the high performance and simple fabrication process. (C) 2019 Optical Society of America

引用

页码：2197 / 2200

页数：4

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