Wavelength-division-multiplexed InGaAs/InP avalanched photodiodes for quantum key distributions

被引：9
|
作者：
Lee, Moon Hyeok [1 ]
Ha, Changkyun [1 ]
Jeong, Heung-Sun [1 ]
Kim, Dong Wook [1 ]
Lee, Seoung Hun [1 ]
Lee, Min Hee [1 ]
Kim, Kyong Hon [1 ]
机构：
[1] Inha Univ, Dept Phys, Inchon 22212, South Korea
来源：
OPTICS COMMUNICATIONS | 2016年 / 361卷
基金：
新加坡国家研究基金会;
关键词：
Quantum detectors; Avalanche photodiodes; Quantum communications; Quantum cryptography; LOW-NOISE; CRYPTOGRAPHY; PERFORMANCE; SYSTEM; FIBER;
D O I：
10.1016/j.optcom.2015.10.050
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate improved single photon detection efficiencies of InGaAs/InP avalanche photodiodes (APDs) in a wavelength-division-multiplexed (WDM) scheme for high-capacity plug-and-play-type two-way quantum key distributions (QKDs). Single-photon detectors (SPDs) combined in the WDM APD scheme can be used to overcome the detection speed limit of a single SPD which is caused mainly by the afterpulse effect. The multiple SPDs combined in the parallel WDM scheme can increase the single photon detection capacity, although additional optical losses resulted from the WDM MUX and deMUX devices induce limited increases. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：162 / 167
页数：6
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