Modelling a junction diode in a two-dimensional array

被引：11
作者：
Gopal, V
机构：
[1] Solid State Physics Laboratory, Delhi, 110054, Lucknow Road
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1997年 / 83卷 / 02期
关键词：
D O I：
10.1080/002072197135517
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Guided by the simple physical and geometrical considerations, an analytical approach is presented to model a junction diode in a two-dimensional array. The proposed model includes the contributions of the lateral diffusion current and the surface leakage current from the surface area of the material between the neighbouring diodes in an area array, in addition to the usual thermal diffusion currents from the material just beneath the junction.
引用
收藏
页码：191 / 200
页数：10
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