Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr

被引：48

作者：

Cao, XA ^{[1
]}

Pearton, SJ

Dang, GT

Zhang, AP

Ren, F

Wilson, RG

Van Hove, JM

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] SVT Associates, Eden Prairie, MN 55344 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 03期

关键词：

D O I：

10.1063/1.371984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Implantation of n- and p-type GaN with Ti+, O+, Fe+, or Cr+ was found to produce defect levels which pinned the Fermi level in these materials at E-C-(0.20-0.49) eV (n type) or E-V + 0.44 eV (p type). Maximum sheet resistances of similar to 10(12) Omega/square (n type) and similar to 10(10) Omega/square (p type) were obtained after implantation and annealing in the range of 300-600 degrees C. At higher annealing temperatures, the sheet resistance decreased to near the unimplanted values (3 x 10(4) Omega/square in p type, 7 x 10(2) Omega/square in n type). The evolution of the sheet resistance with annealing temperature is consistent with damage-related trap sites removing carriers from the conduction or valence bands. (C) 2000 American Institute of Physics. [S0021-8979(00)01603-0].

引用

页码：1091 / 1095

页数：5

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