A class-E power amplifier based on an extended resonance technique

被引：10

作者：

Martin, AL ^{[1
]}

Mortazawi, A

机构：

[1] ITT GaAs Tek, Roanoke, VA 24019 USA

[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 01期

关键词：

Circuit resonance - Electric network topology - Electronic equipment manufacture - Integrated circuit layout - MESFET devices - Microstrip devices - Semiconducting gallium arsenide;

D O I：

10.1109/22.817476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a class-E power amplifier using four 1-W GaAs MESFET's at 935 MHz is demonstrated using a new extended resonance power-combining technique. A microstrip amplifier based on this technique was designed and fabricated which combines four 1-W Siemens CLY5 GaAs MESFET's with 67% power-added efficiency at 935 MHz.

引用

页码：93 / 97

页数：5

共 16 条

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[2]

GIPPRICH J, 1993, IEEE MICROWAVE THEOR, V3, P1369

[3]

Gipprich J. W., 1994, IEEE 3rd Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No.94TH8022), P167, DOI 10.1109/EPEP.1994.594129

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