Te-seeded growth of few-quintuple layer Bi2Te3 nanoplates

被引:21
作者
Zhao, Yanyuan [1 ]
de la Mata, Maria [2 ]
Qiu, Richard L. J. [3 ]
Zhang, Jun [1 ]
Wen, Xinglin [1 ]
Magen, Cesar [4 ,5 ]
Gao, Xuan P. A. [3 ]
Arbiol, Jordi [2 ,6 ]
Xiong, Qihua [1 ,7 ]
机构
[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] ICMAB CSIC, Inst Ciencia Mat Barcelona, E-08193 Bellaterra, Cat, Spain
[3] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
[4] Univ Zaragoza, LMA, Inst Nanociencia Aragon INA ARAID, Zaragoza 50018, Spain
[5] Univ Zaragoza, Dept Fis Mat Condensada, Zaragoza 50018, Spain
[6] ICREA, Barcelona 08010, Cat, Spain
[7] Nanyang Technol Univ, Sch Elect & Elect Engn, Nanoelect Ctr Excellence, NOVITAS, Singapore 639798, Singapore
基金
新加坡国家研究基金会; 美国国家科学基金会;
关键词
Te nucleation seed; epitaxial growth; Bi2Te3; few-quintuple layer; TEM cross-section; optical contrast; TOPOLOGICAL INSULATOR BI2SE3; ENHANCED THERMOELECTRIC PROPERTIES; SINGLE DIRAC CONE; EPITAXIAL-GROWTH; PRESSURES; TRANSPORT; GAP; SI;
D O I
10.1007/s12274-014-0487-y
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report on a Te-seeded epitaxial growth of ultrathin Bi2Te3 nanoplates (down to three quintuple layers (QL)) with large planar sizes (up to tens of micrometers) through vapor transport. Optical contrast has been systematically investigated for the as-grown Bi2Te3 nanoplates on the SiO2/Si substrates, experimentally and computationally. The high and distinct optical contrast provides a fast and convenient method for the thickness determination of few-QL Bi2Te3 nanoplates. By aberration-corrected scanning transmission electron microscopy, a hexagonal crystalline structure has been identified for the Te seeds, which form naturally during the growth process and initiate an epitaxial growth of the rhombohedralstructured Bi2Te3 nanoplates. The epitaxial relationship between Te and Bi2Te3 is identified to be perfect along both in-plane and out-of-plane directions of the layered nanoplate. Similar growth mechanism might be expected for other bismuth chalcogenide layered materials.
引用
收藏
页码:1243 / 1253
页数:11
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