Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

被引：4

作者：

Luan Gui-Ping ^{[1
]}

Zhang Pei-Ran ^{[1
]}

Jiao Na ^{[1
]}

Sun Li-Zhong ^{[2
]}

机构：

[1] Xiangtan Univ, Dept Phys, Xiangtan 411105, Peoples R China

[2] Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China

来源：

CHINESE PHYSICS B | 2015年 / 24卷 / 11期

基金：

中国国家自然科学基金;

关键词：

graphene; first-principles method; magnetotunnel junction; tunneling magnetoresistance; HEXAGONAL-BORON-NITRIDE; GRAPHENE; TRANSPORT; CARBON;

D O I：

10.1088/1674-1056/24/11/117201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using the density functional theory and the nonequilibrium Green's function method, we studied the finite-bias quantum transport in a Cr/graphene/Cr magnetotunnel junction (MTJ) constructed by a single graphene layer sandwiched between two semi-infinite Cr(111) electrodes. We found that the tunneling magnetoresistance (TMR) ratio in this MTJ reached 108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to MgO-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications.

引用

页数：6

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