Parabolic behavior of solution processed ZnSnO device performances depending on Zn/Sn ratios

被引：8

作者：

Jeon, Hye-Ji ^{[1
]}

Chung, Kwun-Bum ^{[2
]}

Park, Jin-Seong ^{[1
]}

机构：

[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 133719, South Korea

[2] Dongguk Univ, Dept Phys, Seoul 100715, South Korea

来源：

JOURNAL OF ELECTROCERAMICS | 2014年 / 32卷 / 04期

关键词：

Thin film transistor; Oxide semiconductor; Solution process; SEMICONDUCTOR;

D O I：

10.1007/s10832-014-9902-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process, prepared by dissolving 0.2 M of zinc acetate dihydrate and tin chloride dihydrate in 20 mL of 2-methoxyethanol. All ZTO thin films showed amorphous phases and no impurities (no carbon and chlorine content) even at process temperature of 350 A degrees C. As the Sn ratio in ZTO films increased, the values of saturated mobility (u(sat)) and subthreshold gate swing (SS) exhibited a parabolic behavior in ZTO TFTs, depicting that the mu(sat) and SS values were a maximum (3.4 cm(2)/V.s) and minimum (0.38 V/decade) at Zn/Sn = 1 ratio. Interestingly, the x-ray absorption and X-ray photoemission spectroscopy revealed the origin of parabolic behavior, indicating not only to improve a charge transport in conduction bands but also to increase the Sn4+/Sn2+ ratio at the peak values (Sn/(Zn + Sn) = 1).

引用

页码：319 / 323

页数：5

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