Quantum electrical transport properties of topological insulator Bi2Te3 nanowires

被引：18

作者：

Kim, Hong-Seok ^{[1
]}

Shin, Ho Sun ^{[2
]}

Lee, Joon Sung ^{[3
]}

Ahn, Chi Won ^{[4
]}

Song, Jae Yong ^{[2
]}

Doh, Yong-Joo ^{[1
]}

机构：

[1] Korea Univ, Dept Appl Phys, Sejong 339700, South Korea

[2] Korea Res Inst Stand & Sci, Ctr Nanomat Characterizat, Daejeon 305340, South Korea

[3] Korea Univ, Dept Display & Semicond Phys, Sejong 339700, South Korea

[4] Natl Nanofab Ctr, Nanomat Lab, Daejeon 305806, South Korea

来源：

CURRENT APPLIED PHYSICS | 2016年 / 16卷 / 01期

关键词：

Topological insulators; Quantum interference; Weak antilocalizatioin; Aharonov-Bohm oscillations; Topological surface state; SINGLE DIRAC CONE; WEAK ANTILOCALIZATION; SURFACE-STATES; THIN-FILMS; BI2SE3; METAL;

D O I：

10.1016/j.cap.2015.10.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov-Bohm oscillations of phases 0 and pi are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibits exponential temperature dependence, suggesting that the phase coherence length L phi is inversely proportional to the temperature, as in quasi-ballistic systems. In addition, a weak antilocalization analysis on the surface channel by using a one-dimensional localization theory, enabled by successful extraction of the surface contribution from the magnetoconductance data, is provided in support of the temperature dependence of L phi. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：51 / 56

页数：6

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