Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere

被引：35
作者：
Lin, TC [1 ]
Chang, SC [1 ]
Chiu, CF [1 ]
机构：
[1] Kan Shan Univ, Dept Elect Engn, Tainan 71003, Taiwan
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 129卷 / 1-3期
关键词：
indium oxide; oxides; sputtering; thin films; optical properties; electron conduction;
D O I：
10.1016/j.mseb.2005.12.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A layer of copper was Sputtered onto an indium tin oxide (ITO) glass substrates to form an ITO/Cu film, using a direct current magnetron operated at room temperature and in argon gas. The ITO and ITO/Cu films were heated in vacuum, and in hydrogen gas, to study their dependence of electronic and optical properties on annealing temperature. The resistivity of the ITO film was reduced from 6.2 x 10(-4) to 2.7 x 10(-4) Omega cm, and the average optical transmittance was improved to above 90% by the annealing process. The ITO/Cu film showed a low value of resistivity of 2.8 x 10(-4) Omega cm and the transmittance was between 58 and 72%. (c) 2005 Elsevier B.V. All rights reserved.
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页码：39 / 42
页数：4
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