Low-field magnetoresistance in sol-gel derived La2/3Sr1/3MnO3-δ thick films

被引：7

作者：

Shim, IB ^{[1
]}

Lee, HM

Park, KT

Lee, BW

Kim, CS

机构：

[1] Kookmin Univ, Dept Phys Elect, Seoul 136702, South Korea

[2] Hankuk Univ Foreign Studies, Dept Phys, Kyungki 449791, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 242卷

关键词：

low-field MR; sol-gel; magnetic sensor; grain boundary;

D O I：

10.1016/S0304-8853(01)01291-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thick films or La2/3Sr1/3MnO3-delta were fabricated on thermally oxidized Si(1 0 0) and polycrystalline aluminum oxide by a screen printing method. The maximum low-field magnetoresistence (MR) ratio, 0.68%, was obtained at 300 K for the sample which was sintered at 1100 C. that is an MR ratio of 0.0015%/Oe in the 450 Oe field region. We propose that this MR ratio is enough to fabricate device, which can be used as a low-cost magnetic sensor. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1169 / 1171

页数：3

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