Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

被引：103

作者：

Cartiglia, N. ^{[1
]}

Staiano, A. ^{[1
]}

Sola, V. ^{[1
]}

Arcidiacono, R. ^{[1
,2
]}

Cirio, R. ^{[1
,3
]}

Cenna, F. ^{[1
,3
]}

Ferrero, M. ^{[1
,3
]}

Monaco, V. ^{[1
,3
]}

Mulargia, R. ^{[1
,3
]}

Obertino, M. ^{[1
,3
]}

Ravera, F. ^{[1
,3
]}

Sacchi, R. ^{[1
,3
]}

Bellora, A. ^{[3
]}

Durando, S. ^{[3
]}

Mandurrino, M.

Minafra, N. ^{[4
,5
]}

Fadeyev, V. ^{[6
]}

Freeman, P. ^{[6
]}

Galloway, Z. ^{[6
]}

Gkougkousis, E. ^{[6
]}

Grabas, H. ^{[6
]}

Gruey, B. ^{[6
]}

Labitan, C. A. ^{[6
]}

Losakul, R. ^{[6
]}

Luce, Z. ^{[6
]}

McKinney-Martinez, F. ^{[6
]}

Sadrozinski, H. F. -W. ^{[6
]}

Seiden, A. ^{[6
]}

Spencer, E. ^{[6
]}

Wilder, M. ^{[6
]}

Woods, N. ^{[6
]}

Zatserklyaniy, A. ^{[6
]}

Pellegrini, G. ^{[7
]}

Hidalgo, S. ^{[7
]}

Carulla, M. ^{[7
]}

Flores, D. ^{[7
]}

Merlos, A. ^{[7
]}

Quirion, D. ^{[7
]}

Cindro, V. ^{[8
,9
]}

Kramberger, G. ^{[8
,9
]}

Mandic, I. ^{[8
,9
]}

Mikuz, M. ^{[8
,9
]}

Zavrtanik, M. ^{[8
,9
]}

机构：

[1] Ist Nazl Fis Nucl, Turin, Italy

[2] Univ Piemonte Orientale, Vercelli, Italy

[3] Univ Torino, Turin, Italy

[4] Politecn Torino, Turin, Italy

[5] Univ Kansas, Lawrence, KS 66045 USA

[6] Univ Calif Santa Cruz, SCIPP, Santa Cruz, CA 95064 USA

[7] CSIC, CNM, IMB, Barcelona, Spain

[8] Univ Ljubljana, Jozef Stefan Inst, Ljubljana, Slovenia

[9] Univ Ljubljana, Dept Phys, Ljubljana, Slovenia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2017年 / 850卷

基金：

美国能源部; 欧洲研究理事会;

关键词：

Fast silicon sensors; Charge multiplication; Thin tracking sensors; Silicon strip; Pixel detectors;

D O I：

10.1016/j.nima.2017.01.021

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 gm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm(2). The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.

引用

页码：83 / 88

页数：6

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