Solution of Schrodinger equation in double-gate MOSFETs using transfer matrix method

被引：14

作者：

Abdolkader, TM ^{[1
]}

Hassan, HH

Fikry, W

Omar, OA

机构：

[1] Benha Higher Inst Technol, Dept Basic Sci, Banha, Egypt

[2] Ain Shams Univ, Fac Engn, Dept Engn Phys & Math, Cairo, Egypt

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 20期

关键词：

D O I：

10.1049/el:20045595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transfer matrix method (TMM) has been extensively used to investigate quantum-mechanical tunnelling through potential barriers. Reported is the application of TMM, for the first time, to solve the Schrodinger equation in double-gate MOSFETs. The method is shown to be more accurate than the conventional finite difference method, especially for high energy levels.

引用

页码：1307 / 1308

页数：2

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