p-type quantum well infrared photodetectors covering wide spectrum

被引：7
|
作者：
Liu, HC [1 ]
Oogarah, T
Dupont, E
Wasilewski, ZR
Byloos, M
Buchanan, M
Szmulowicz, F
Ehret, J
Brown, GJ
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] USAF, Mat Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA
来源：
ELECTRONICS LETTERS | 2002年 / 38卷 / 16期
关键词：
D O I：
10.1049/el:20020644
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using a set of p-type GaAs/AlGaAs quantum well infrared photo-detectors, a wide spectral coverage is demonstrated. Photoresponses at wavelengths as short as 1.4 mum and as long as 15 mum are shown. The shortest wavelength device with a high Al fraction (95%) peaks at 1.9 mum and covers a range of 1.4 to 3 mum.
引用
收藏
页码：909 / 911
页数：3
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