Advances in 1300-nm InGaAsN quantum well VCSELs

被引：2

作者：

Klem, JF ^{[1
]}

Serkland, DK ^{[1
]}

Geib, KM ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES X | 2002年 / 4646卷

关键词：

vertical cavity surface emitting lasers; InGaAsN;

D O I：

10.1117/12.470509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improvements in the performance of InGaAsN quantum well VCSELs operating near 1300 nn are reported. The effects of alloy composition on the photoluminescence intensity, linewidth, and anneal-induced wavelength blueshift of molecular beam epitaxial InGaAsN quantum wells are detailed. VCSELs employing a conventional p-n diode structure are demonstrated and compared to devices using two n-type DBR mirrors and an internal tunnel diode. Room-temperature differential efficiencies as high as 0.24 W/A, output powers of 2.1 mW, and a maximum CW operating temperature as high as 105degreesC have all been demonstrated in these devices.

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收藏

页码：137 / 144

页数：8

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