Carbon nanotube field emitters for planar emission vacuum micro- and nanoelectronics

被引：8

作者：

Gavrilov, SA ^{[1
]}

Il'ichev, ÉA

Poltoratskii, ÉA

Rychkov, GS

Dvorkin, VV

Dzbanovsky, NN

Suetin, NV

机构：

[1] State Res Inst Phys Problems, Zelenograd, Moscow Oblast, Russia

[2] Moscow MV Lomonosov State Univ, Nucl Phys Res Inst, Moscow, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 07期

关键词：

D O I：

10.1134/1.1783418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The design and manufacturing technology of carbon nanotube field emitters for novel devices of planar emission vacuum micro- and nanoelectronics are described. Prototypes of diode structures with such emitters are obtained in which the threshold field strength amounts to similar to2 V/mum and the direct to reverse current ratio exceeds 10(5). The obtained small scatter of characteristics points to the possibility of creating integrated circuits possessing high operation speed and a working temperature range expanded from -60 to +300degreesC. (C) 2004 MAIK "Nauka/Interperiodica".

引用

页码：609 / 611

页数：3

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