Carbon nanotube field emitters for planar emission vacuum micro- and nanoelectronics

被引：8
|
作者：
Gavrilov, SA [1 ]
Il'ichev, ÉA
Poltoratskii, ÉA
Rychkov, GS
Dvorkin, VV
Dzbanovsky, NN
Suetin, NV
机构：
[1] State Res Inst Phys Problems, Zelenograd, Moscow Oblast, Russia
[2] Moscow MV Lomonosov State Univ, Nucl Phys Res Inst, Moscow, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 07期
关键词：
D O I：
10.1134/1.1783418
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The design and manufacturing technology of carbon nanotube field emitters for novel devices of planar emission vacuum micro- and nanoelectronics are described. Prototypes of diode structures with such emitters are obtained in which the threshold field strength amounts to similar to2 V/mum and the direct to reverse current ratio exceeds 10(5). The obtained small scatter of characteristics points to the possibility of creating integrated circuits possessing high operation speed and a working temperature range expanded from -60 to +300degreesC. (C) 2004 MAIK "Nauka/Interperiodica".
引用
收藏
页码：609 / 611
页数：3
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