Chemical Vapor Deposition of Graphene on a "Peeled-Off" Epitaxial Cu(111) Foil: A Simple Approach to Improved Properties

被引:69
|
作者
Yu, Hak Ki [1 ,2 ]
Balasubramanian, Kannan [3 ]
Kim, Kisoo [4 ,5 ]
Lee, Jong-Lam [4 ,5 ]
Maiti, Manisankar [6 ]
Ropers, Claus [6 ]
Krieg, Janina [3 ]
Kern, Klaus [3 ]
Wodtke, Alec M. [1 ,2 ]
机构
[1] Univ Gottingen, Inst Phys Chem, D-37077 Gottingen, Germany
[2] Max Planck Inst Biophys Chem, D-37077 Gottingen, Germany
[3] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[4] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea
[5] Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Pohang 790784, South Korea
[6] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany
关键词
chemical vapor deposition; copper catalyst; graphene; epitaxial Cu (111) foil; peel-off; carrier mobility; SINGLE-LAYER GRAPHENE; CHARGE-TRANSPORT; COPPER FOILS; GROWTH; SAPPHIRE; MOBILITY; CU; SUBSTRATE; FILMS;
D O I
10.1021/nn503476j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present a simple approach to improving the quality of CVD grown graphene, exploiting a Cu(111) foil catalyst The catalyst is epitaxially grown by evaporation on a single crystal sapphire substrate, thickened by electroplating, and peeled off. The exposed surface is atomically fiat easily reduced, and exclusively of (111) orientation. Graphene grown on this catalyst under atmospheric CVD conditions and without wet chemical prereduction produces single crystal domain sizes of several hundred micrometers in samples that are many centimeters in size. The graphene produced in this way can easily be transferred to other substrates using well established techniques. We report mobilities extracted using field-effect (as high as 29 000 cm(2) V-1 s(-1)) and Hall bar measurement (up to 10 100 cm(2) V-1 s(-1)).
引用
收藏
页码:8636 / 8643
页数:8
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