Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

被引：11
|
作者：
Wang, Chong [1 ,2 ]
Guo, Liang [1 ,3 ]
Lei, Mingzhou [1 ,2 ]
Wang, Chao [1 ,2 ]
Chu, Xuefeng [1 ,2 ]
Yang, Fan [1 ,2 ]
Gao, Xiaohong [1 ,2 ]
Wamg, Huan [1 ]
Chi, Yaodan [1 ,2 ]
Yang, Xiaotian [1 ,4 ]
机构：
[1] Jilin Jianzhu Univ, Key Lab Comprehens Energy Saving Cold Reg Archite, Minist Educ, Changchun 130118, Peoples R China
[2] Jilin Jianzhu Univ, Sch Elect & Comp Sci, Changchun 130118, Peoples R China
[3] Jilin Jianzhu Univ, Dept Basic Sci, Changchun 130118, Peoples R China
[4] Jilin Normal Univ, Dept Chem, Siping 136000, Peoples R China
来源：
NANOMATERIALS | 2022年 / 12卷 / 14期
关键词：
thin-film transistor; annealing treatment; XPS analysis; TRANSPARENT; PERFORMANCE; GROWTH; STABILITY;
D O I：
10.3390/nano12142397
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn2+ is presented. Electrical results show that the TFT annealed at 600 degrees C exhibits the best performance. It exhibits high saturation mobilities (mu(SAT)) up to 12.64 cm(2)V(-1)s(-1), a threshold voltage (V-TH) of -6.61 V, a large on/off current ratio (I-on/I-off) of 1.87 x 10(9), and an excellent subthreshold swing (SS) of 0.79 V/Decade.
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收藏
页数：11
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