Direct growth of large area uniform double layer graphene films on MgO (100) substrates by chemical vapor deposition

被引:6
|
作者
Luo, Junjie [1 ,2 ]
Wang, Jing [1 ]
Xia, Feifei [1 ]
Huang, Xintang [1 ]
机构
[1] Cent China Normal Univ, Dept Phys, Inst Nanosci & Nanotechnol, Wuhan 430079, Hubei, Peoples R China
[2] Yancheng Teachers Coll, Dept Phys & Elect Engn, Yancheng 224002, Peoples R China
基金
中国国家自然科学基金;
关键词
Graphene; Direct growth; MgO; Insulating substrate; Raman mapping; Chemical vapor deposition; STACKED BILAYER GRAPHENE; SINGLE-CRYSTAL GRAPHENE; HIGH-QUALITY MONOLAYER; RAMAN-SPECTROSCOPY; CATALYST-FREE; ROADMAP;
D O I
10.1016/j.matchemphys.2019.05.067
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Direct growth of large area uniform high quality graphene films on insulating substrates is very important for graphene-based devices. Here we report a facile approach to directly fabricate uniform and large area bi-layer graphene films on MgO(100) substrates by chemical vapor deposition, without the aid of any metal catalysts. Raman spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy are used to characterize the synthesized graphene films. Raman mapping indicates that the graphene films are large area uniformity. The mobility of these directly grown graphene films is 130 cm(2)/(VS) and they may have potential applications in electronic devices, sensors, conductive films, etc.
引用
收藏
页码:213 / 219
页数:7
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