Modeling and simulation of a MOSFET gas sensor with platinum gate for hydrogen gas detection

被引：33

作者：

Abadi, Mojtaba Safari Hassan ^{[1
]}

Gholizadeh, Moharram ^{[1
]}

Salehi, Alireza ^{[1
]}

机构：

[1] KN Toosi Univ Technol, Dept Elect Engn, Lab Device Fabricat, Tehran, Iran

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2009年 / 141卷 / 01期

关键词：

Gas adsorption; Hydrogen pressure; MOSFET gas sensor; Platinum gate; Threshold voltage;

D O I：

10.1016/j.snb.2009.06.032

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A mathematical model of the MOSFET gas sensor together with its operational specification towards the various hydrogen pressures are reported. The modeling is done for steady-state conditions. When the MOSFET sensor is exposed to hydrogen gas, chemical reactions are occurred and eventually come to equilibrium. In such circumstances, a linear relation between the shift in the threshold voltage and the different hydrogen pressures is observed which can be used to predict the response of the sensor to the different hydrogen pressures. An excellent agreement is found between the experimental data and the Simulation results exhibiting the proof of the model. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1 / 6

页数：6

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