Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence

被引：62
|
作者：
Yang, Yang [1 ,2 ]
Li, Yunpeng [1 ,2 ]
Wang, Canxing [1 ,2 ]
Zhu, Chen [1 ,2 ]
Lv, Chunyan [1 ,2 ]
Ma, Xiangyang [1 ,2 ]
Yang, Deren [1 ,2 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
来源：
ADVANCED OPTICAL MATERIALS | 2014年 / 2卷 / 03期
基金：
美国国家科学基金会;
关键词：
LIGHT-EMITTING DIODE; GALLIUM NITRIDE;
D O I：
10.1002/adom.201300406
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Light-emitting devices based on MgxZn1-xO/ZnO:RE/Si heterostructures are proposed. Hot holes formed in MgxZn1-xO layers enter into ZnO:RE layers to impact-excite the RE3+ ions therein. From the devices using ZnO:RE (Eu, Er and Tm) films, electroluminescence in red, green, blue, and also optical-communication wavelengths are achieved. Such RE-related electroluminescence can be activated by extraordinarily low voltages of only several volts. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：240 / 244
页数：5
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