III-V-on-silicon three-section DBR laser with over 12 nm continuous tuning range

被引：17

作者：

Dhoore, Soren ^{[1
,2
]}

Roelkens, Gunther ^{[1
,2
]}

Morthier, Geert ^{[1
,2
]}

机构：

[1] Ghent Univ IMEC, Photon Res Grp, INTEC, B-9000 Ghent, Belgium

[2] Univ Ghent, Ctr Nano & Biophoton NB Photon, B-9000 Ghent, Belgium

来源：

OPTICS LETTERS | 2017年 / 42卷 / 06期

关键词：

TUNABLE LASER; COUPLERS; DIODE; CO2;

D O I：

10.1364/OL.42.001121

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Device and tuning characteristics of a novel heterogeneously integrated III-V-on-silicon three-section distributed Bragg reflector (DBR) laser are presented. The laser exhibits a continuous wavelength tuning range of more than 12 nm. Thermal tuning is achieved through carrier injection in the passive tuning layer of a III-V tunable twin-guide membrane. Single-mode lasing with a side-mode suppression ratio larger than 30 dB over the entire tuning range is realized through implementation of a sidewall-corrugated silicon-on-insulator waveguide grating as one of the laser mirrors. (C) 2017 Optical Society of America.

引用

页码：1121 / 1124

页数：4

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