Reflection high energy electron diffraction studies on SixSnyGe1-x-y on Si(100) molecular beam epitaxial growth

被引：10

作者：

Nikiforov, A. I. ^{[1
]}

Mashanov, V. I. ^{[1
]}

Timofeev, V. A. ^{[1
]}

Pchelyakov, O. P. ^{[1
]}

Cheng, H. -H. ^{[2
,3
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

来源：

THIN SOLID FILMS | 2014年 / 557卷

基金：

俄罗斯基础研究基金会;

关键词：

Silicon; Germany; Epitaxy; RHEED; Growth mode; Quantum dots; GE; SN; SEMICONDUCTORS; DIFFUSION; TIN;

D O I：

10.1016/j.tsf.2013.11.128

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In situ reflection high energy electron diffraction was used to study the surface micromorphology of SixSnyGe1 - (x) (-) (y) / Si(100) heterostructures obtained by molecular beam epitaxy. The obtained reflection high energy electron diffraction data allowed us to conclude that the epitaxial SixSnyGe1 - x - y films are grown by the Stranski-Krastanov mechanism. It was established that SixSnyGe1 - x - y and Ge1 - zSnz wetting layer thicknesses depend on the substrate temperature. The observed surface superstructures changed during the wetting layer growth. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：188 / 191

页数：4

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