Energy conservation in collision broadening over a sequence of scattering events in semiclassical Monte Carlo simulation

被引:7
作者
Aksamija, Z. [1 ]
Ravaioli, U.
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
关键词
electron transport theory; electron-phonon interactions; energy conservation; Monte Carlo methods; silicon; SEMICONDUCTORS; TRANSPORT;
D O I
10.1063/1.3116544
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we discuss energy conservation when collisional broadening is considered, and a Lorentzian lineshape assumed, in a Monte Carlo simulation of electron transport. We show that collisional broadening with a Lorentzian distribution does not lead to energy conservation on the average over many electron-phonon collision events. We compute the expected value of departure from energy conservation for a realistic silicon bandstructure, and compare it to results from full-band Monte Carlo simulation to show good agreement. Finally, we propose a corrected distribution approach, where the Lorentzian distribution is divided by the density-of-states curve to obtain a distribution which is able to conserve energy in the average over many electron-phonon collisions.
引用
收藏
页数:4
相关论文
共 9 条
[1]   QUANTUM TRANSPORT-THEORY OF HIGH-FIELD CONDUCTION IN SEMICONDUCTORS [J].
BARKER, JR .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (17) :2663-2684
[2]   MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN GAAS INCLUDING QUANTUM EFFECTS [J].
CHANG, YC ;
TING, DZY ;
TANG, JY ;
HESS, K .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :76-78
[3]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[4]   Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors [J].
Duncan, A ;
Ravaioli, U ;
Jakumeit, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) :867-876
[5]   Introducing energy broadening in semiclassical Monte Carlo simulations [J].
Ferrari, Giulio ;
Asenov, A. ;
Nedjalkov, M. ;
Jacoboni, C. .
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2006, 5 (04) :419-423
[6]   ACCURATE NUMERICAL METHOD FOR CALCULATING FREQUENCY-DISTRIBUTION FUNCTIONS IN SOLIDS [J].
GILAT, G ;
RAUBENHEIMER, LJ .
PHYSICAL REVIEW, 1966, 144 (02) :390-+
[7]   INCLUSION OF COLLISION BROADENING IN SEMICONDUCTOR ELECTRON-TRANSPORT SIMULATIONS [J].
KIM, K ;
MASON, BA ;
HESS, K .
PHYSICAL REVIEW B, 1987, 36 (12) :6547-6550
[8]   QUANTUM KINETIC-EQUATION FOR ELECTRONIC TRANSPORT IN NONDEGENERATE SEMICONDUCTORS [J].
REGGIANI, L ;
LUGLI, P ;
JAUHO, AP .
PHYSICAL REVIEW B, 1987, 36 (12) :6602-6608
[9]   Improved algorithm for modeling collision broadening through a sequence of scattering events in semiclassical Monte Carlo [J].
Register, LF ;
Hess, K .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :303-311