Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography

被引：29
|
作者：
Pezzoli, F. [1 ]
Stoffel, M. [1 ]
Merdzhanova, T. [2 ]
Rastelli, A. [1 ]
Schmidt, O. G. [1 ]
机构：
[1] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源：
NANOSCALE RESEARCH LETTERS | 2009年 / 4卷 / 09期
关键词：
SiGe; Island; Alloying; Wet etching; Tomography; AFM; Lateral ordering; EVOLUTION; DOTS;
D O I：
10.1007/s11671-009-9360-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morphology. This approach allowed us to employ AFM to simultaneously gather information on the composition and strain of SiGe islands. Our quantitative analysis demonstrates that for islands with a fixed aspect ratio, a modified geometry of the substrate provides an enhancement of the relaxation, finally leading to a reduced intermixing.
引用
收藏
页码：1073 / 1077
页数：5
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