Analytical Switching Loss Model for Superjunction MOSFET With Capacitive Nonlinearities and Displacement Currents for DC-DC Power Converters

被引：67

作者：

Castro, Ignacio ^{[1
]}

Roig, Jaume ^{[2
]}

Gelagaev, Ratmir ^{[3
]}

Vlachakis, Basil ^{[2
]}

Bauwens, Filip ^{[2
]}

Lamar, Diego G. ^{[1
]}

Driesen, Johan ^{[3
]}

机构：

[1] Univ Oviedo, Dept Ingn Elect, Elect, Gijon 33204, Spain

[2] Corp R&D, ON Semicond, Power Technol Ctr, B-9700 Oudenaarde, Belgium

[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2016年 / 31卷 / 03期

关键词：

Power MOSFET; analytical Models; capacitors; nonlinear circuit and current measurements; CAPACITANCES; INSIGHT;

D O I：

10.1109/TPEL.2015.2433017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new analytical model is presented in this study to predict power losses and waveforms of high-voltage silicon super-junction MOSFET during hard-switching operation. This model depends on datasheet parameters of the semiconductors, as well as the parasitics obtained from the printed circuit board characterization. It is important to note that it also includes original features accounting for strong capacitive nonlinearities and displacement currents. Moreover, these features demand unusual extraction of electrical characteristics from regular datasheets. A detailed analysis on how to obtain this electrical characteristic is included in this study. Finally, the high accuracy of the model is validated with experimental measurements in a double-pulse buck converter setup by using commercial SJ MOSFET, as well as advanced device prototypes under development.

引用

页码：2485 / 2495

页数：11

共 12 条

[1]

[Anonymous], 2010, SENT TCAD TOOLS SUIT

[2]

Bobde M, 2010, PROC INT SYMP POWER, P321

[3] Circuit-Oriented Treatment of Nonlinear Capacitances in Switched-Mode Power Supplies [J].

Costinett, Daniel ;

Maksimovic, Dragan ;

Zane, Regan .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2015, 30 (02) :985-995

[4]

EBERLE W, 2008, P IEEE APPL POW EL C, P36

[5] On the Tradeoff Between Input Current Quality and Efficiency of High Switching Frequency PWM Rectifiers [J].

Hartmann, Michael ;

Ertl, Hans ;

Kolar, Johann W. .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2012, 27 (07) :3137-3149

[6] Determination of Transient Transistor Capacitances of High Voltage MOSFETs from Dynamic Measurements [J].

Hoech, Vera ;

Petzoldt, Juergen ;

Jacobs, Heiner ;

Schloegl, Andreas ;

Deboy, Gerald .

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, :148-+

[7] Parasitic inductance effect on switching losses for a high frequency Dc-Dc converter [J].

Meade, Thomas ;

O'Sullivan, Dara ;

Foley, Raymond ;

Achimescu, Cristian ;

Egan, Michael ;

McCloskey, Paul .

APEC 2008: TWENTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-4, 2008, :3-+

[8]

Raee H, 2013, C IND ELECT APPL, P705

[9] Analytical loss model of power MOSFET [J].

Ren, YC ;

Xu, M ;

Zhou, JH ;

Lee, FC .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2006, 21 (02) :310-319

[10] An Insight into the Switching Process of Power MOSFETs: An Improved Analytical Losses Model [J].

Rodriguez, Miguel ;

Rodriguez, Alberto ;

Fernandez Miaja, Pablo ;

Gonzalez Lamar, Diego ;

Sebastian Zuniga, Javier .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2010, 25 (06) :1626-1640

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