Photoresponse Properties of Semiconducting BaSi2 Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy

被引：53

作者：

Matsumoto, Yuta ^{[1
]}

Tsukada, Dai ^{[1
]}

Sasaki, Ryo ^{[1
]}

Takeishi, Mitsutomo ^{[1
]}

Suemasu, Takashi ^{[2
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 02期

基金：

日本科学技术振兴机构;

关键词：

ORTHORHOMBIC BASI2; OPTICAL-PROPERTIES; HIGH-PRESSURES; THIN-FILMS; BA1-XSRXSI2; SILICIDES;

D O I：

10.1143/APEX.2.021101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

n-Type BaSi2 epitaxial films with 900 nm thickness were grown on Si(111) by molecular beam epitaxy, and striped Au electrodes were formed on the surface. Photocurrents were clearly observed for photons with energies greater than 1.25 eV under bias voltages applied between the electrodes, and this increased sharply with increasing photon energy to attain a maximum at approximately 1.70 eV. The external quantum efficiency increased with the bias voltage and reached approximately 7% at 1.70 eV for a bias voltage of 7 V. This value is 100 times larger than the highest value ever reported for semiconducting silicide films. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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